Abstract
Silicon oxides arc used as isolating and passivating films in semiconductor devices and as protective and anti-reflection layers in optical systems. The electrical and optical parameters of such films and layers depend greatly on the chemical composition, i. e. the degree of oxidation.
Herrn Prof. Dr. Walter Koch zum 65. Geburtstag gewidmet und anläßlich des 7. Kolloquiums über metallkundliche Analyse mit besonderer Berücksichtigung der Elektronenstrahlmikroanalyse, Wien, 23.–25. 10. 1974 vorgetragen.
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References
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© 1975 Springer-Verlag Wien
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Oppolzer, H., Wolfgang, E. (1975). A New Method of Electron-Probe Microanalysis for Determining the Degree of Oxidation in Silicon Oxides. In: Zacherl, M.K. (eds) Siebentes Kolloquium über metallkundliche Analyse mit besonderer Berücksichtigung der Elektronenstrahl-Mikroanalyse. Mikrochimica Acta, vol 6. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8422-6_22
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DOI: https://doi.org/10.1007/978-3-7091-8422-6_22
Publisher Name: Springer, Vienna
Print ISBN: 978-3-211-81328-7
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