Skip to main content

Part of the book series: Mikrochimica Acta ((MIKROCHIMICA,volume 6))

Abstract

Silicon oxides arc used as isolating and passivating films in semiconductor devices and as protective and anti-reflection layers in optical systems. The electrical and optical parameters of such films and layers depend greatly on the chemical composition, i. e. the degree of oxidation.

Herrn Prof. Dr. Walter Koch zum 65. Geburtstag gewidmet und anläßlich des 7. Kolloquiums über metallkundliche Analyse mit besonderer Berücksichtigung der Elektronenstrahlmikroanalyse, Wien, 23.–25. 10. 1974 vorgetragen.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 44.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 59.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. H. Leistner, J. Herberger, and W. Kosak, Kristall und Technik 7, 693 (1972).

    Article  Google Scholar 

  2. E. I. Esmail, C. J. Nicholls, and D. S. Urch, Analyst 98, 725 (1973).

    Article  ADS  Google Scholar 

  3. W. L. Baun and J. S. Solomon, Proc. 6th Nat. Conf. Electron Probe Analysis, Pittsbourgh 1971.

    Google Scholar 

  4. E. Wolfgang, Siemens Forsch.- u. Entwickl.-Ber. 3, 260 (1974).

    Google Scholar 

  5. D. S. Urch, J. Phys. C., Solid State Phys. 3, 1275 (1970).

    Article  ADS  Google Scholar 

  6. Y. Takahashi, K. Yabe, T. Sato, and T. Takahashi, Proc. 6th Intern. Conf. X-Ray Optics and Microanalysis, ed. Shinoda et al., University of Tokyo Press, 1972, p. 553.

    Google Scholar 

  7. E. Ritter, Vakuum-Technik 21, 42 (1972).

    Google Scholar 

  8. J. W. Colby, Proc. 6th Intern. Conf. X-Ray Optics and Microanalysis, ed. Shinoda et al., University of Tokyo Press, 1972, p. 247.

    Google Scholar 

  9. E. W. White and R. Roy, Solid State Communications 2, 151 (1964).

    Article  ADS  Google Scholar 

  10. W. Weisweiler, Quantitative Elektronenstrahl-Mikroanalyse leichter Elemente, Habil. Thesis, Univ. Karlsruhe 1972.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1975 Springer-Verlag Wien

About this paper

Cite this paper

Oppolzer, H., Wolfgang, E. (1975). A New Method of Electron-Probe Microanalysis for Determining the Degree of Oxidation in Silicon Oxides. In: Zacherl, M.K. (eds) Siebentes Kolloquium über metallkundliche Analyse mit besonderer Berücksichtigung der Elektronenstrahl-Mikroanalyse. Mikrochimica Acta, vol 6. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8422-6_22

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-8422-6_22

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-211-81328-7

  • Online ISBN: 978-3-7091-8422-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics