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Applications

  • Carlo Jacoboni
  • Paolo Lugli
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

In the present chapter, we will present a series of applications of the Monte Carlo method to the simulation of specific devices. It will become obvious that the Monte Carlo simulation of devices has followed a very different path than the one that has governed the actual evolution of the real devices. It was shown in chapter 4 that while the first steps towards the development of semiconductor devices for microelectronics were based on covalent semiconductors (Si and Ge), GaAs and other polar materials entered the scene only at a later stage. Furthermore, a large gap existed (and still exists) between the state of the art of fabrication, which is still dominated by Si C-MOS and bipolar structures, and the realm of “research and development”, where GaAs fied-effect transistors with very sophisticated geometries and extremely reduced dimensions are currently produced. As pointed out in chapter 4, one exception is certainly found in the microwave area, where GaAs single devices are currently used.

Keywords

Gate Voltage Drain Current Gate Length Electron Distribution Function High Electron Mobility Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1989

Authors and Affiliations

  • Carlo Jacoboni
    • 1
  • Paolo Lugli
    • 2
  1. 1.Dipartimento di FisicaUniversità di ModenaItaly
  2. 2.Dipartimento di Ingegneria MeccanicaII Università di Roma “Tor Vergata”Italy

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