Multi-Dimensional TCAD: The PROMPT/DESSIS Approach
Designing new semiconductor devices for very large scale integrated circuits (VLSI) requires intensive use of process and device simulation tools to reduce development costs. However, valid device simulation results can only be achieved when a high geometrical modeling precision has been reached during the process simulation phase. Accurate finite element simulators embedded in a multi-dimensional process simulation environment help to fulfill this quality requirement. Since general-purpose three-dimensional (3D) process simulators are not yet available, a modern design environment combines solid modeling techniques with one-dimensional (1D) and two-dimensional (2D) finite element simulators. In this article we present a consistent and integrated process simulation environment that eases the characterization and optimization of semiconductor devices. The straightforward modeling in all three dimensions of an EEPROM cell illustrates the presented approach.
KeywordsBreakdown Voltage Very Large Scale Integrate Device Simulation Floating Gate Tunnel Oxide
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