Advertisement

Multi-Dimensional TCAD: The PROMPT/DESSIS Approach

  • M. Westermann
  • T. Feudel
  • N. Strecker
  • S. Gappisch
  • A. Höfler
  • W. Fichtner
Conference paper

Abstract

Designing new semiconductor devices for very large scale integrated circuits (VLSI) requires intensive use of process and device simulation tools to reduce development costs. However, valid device simulation results can only be achieved when a high geometrical modeling precision has been reached during the process simulation phase. Accurate finite element simulators embedded in a multi-dimensional process simulation environment help to fulfill this quality requirement. Since general-purpose three-dimensional (3D) process simulators are not yet available, a modern design environment combines solid modeling techniques with one-dimensional (1D) and two-dimensional (2D) finite element simulators. In this article we present a consistent and integrated process simulation environment that eases the characterization and optimization of semiconductor devices. The straightforward modeling in all three dimensions of an EEPROM cell illustrates the presented approach.

Keywords

Breakdown Voltage Very Large Scale Integrate Device Simulation Floating Gate Tunnel Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    C. Hegarty, T. Feudel, N.Histschefld, R. Ryter, N. Strecker, M. Westermann,and W.Fichtner, “An Approach to Three- Dimensional VLSI Prcess Simulation,” Proc. Process Physics and Modeling in Semiconductor Technology, vol. 93–6, pp. 565–575, 1993.Google Scholar
  2. [2]
    T. Feudel, “TESIM-4 User’s Guide,” ISE AG, Zürich, 1994.Google Scholar
  3. [3]
    N. Strecker, “The 2D-Process Simulator DIOS,” ISE AG, Zürich, 1994.Google Scholar
  4. [4]
    M. Westermann, N. Strecker, P. Regli, and W. Fichtner, “Reliable Solid Modeling for Three-Dimensional Semiconductor Process and Device Simulation,” Proc. NUPAD V (Honolulu), pp. 49–52, June 5–6, 1994.Google Scholar
  5. [5]
    G. Garretón, L. Villablanca, N. Strecker, and W. Fichtner, “A new approach for 2-d mesh generation for complex device structures,” Proc. NUPAD V (Honolulu), June 1994.Google Scholar
  6. [6]
    N. Hitschfeld, Grid Generation for Three-Dimensional Non-Rectangular Semiconductor Devices. Ph.D. Dissertation, Integrated Systems Laboratory, ETH-Zurich, 1993.Google Scholar
  7. [7]
    S. Müller, An Object-Oriented Approach to Multidimensional Semiconductor Device Simulation. Ph.D. Thesis, Integrated Systems Laboratory, ETH-Zurich, 1994.Google Scholar
  8. [8]
    M. Posselt, “CRYSTAL-TRIM and its Application to Investigations on Channeling Effects During Ion Implantation,” Radiation Effects and Defects in Solids, vol. 130–131, pp. 87–119, 1994.CrossRefGoogle Scholar
  9. [91.
    M. Westermann, P. Regli, N. Strecker, and W. Fichtner, “Improving Three-Dimensional Semiconductor Modeling through Layout and Process Flow Analysis,” Proc. ESSDERC’94 (Edinburgh), pp. 351–354, September 1994.Google Scholar
  10. [10]
    N. Guillemot, G. Pananakakis, and P. Chenevier, “A new analytical model of the bird’s beak,” IEEE Trans. on Electron Devices, vol. 34, pp. 1033–1038, May 1987.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1995

Authors and Affiliations

  • M. Westermann
    • 1
  • T. Feudel
    • 2
  • N. Strecker
    • 2
  • S. Gappisch
    • 2
  • A. Höfler
    • 2
  • W. Fichtner
    • 1
    • 2
  1. 1.ISE Integrated Systems Engineering AGZürichSwitzerland
  2. 2.Integrated Systems LaboratorySwiss Federal Institute of TechnologyZürichSwitzerland

Personalised recommendations