A Three-Dimensional Process Simulation using Advanced SMART-P program

  • H. Umimoto
  • S. Odanaka
  • A. Gohda
Conference paper


We developed a first version of three dimensional process simulator: SMART-P in 1987. This simulator has been used to develop the DRAM cells, CMOS processes and CCD devices. We advanced this program through these applications in some technical points, which are a TCAD system, physical models, numerical approaches and estimation techniques. In this paper, an advanced SMART-P program is described using three-dimensional simulation results of oxidation and BPSG flow.


Impurity Concentration Oxide Growth Hole Structure Island Structure Mask Region 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer-Verlag/Wien 1995

Authors and Affiliations

  • H. Umimoto
    • 1
  • S. Odanaka
    • 1
  • A. Gohda
    • 1
  1. 1.Semiconductor Research CenterMatsushita Electric Industrial Co., Ltd.Moriguchi, OsakaJapan

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