A Three-Dimensional Process Simulation using Advanced SMART-P program
We developed a first version of three dimensional process simulator: SMART-P in 1987. This simulator has been used to develop the DRAM cells, CMOS processes and CCD devices. We advanced this program through these applications in some technical points, which are a TCAD system, physical models, numerical approaches and estimation techniques. In this paper, an advanced SMART-P program is described using three-dimensional simulation results of oxidation and BPSG flow.
KeywordsImpurity Concentration Oxide Growth Hole Structure Island Structure Mask Region
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