Modeling of Particle-Irradiated Devices

  • L. Colalongo
  • M. Valdinoci
  • M. Rudan
Conference paper


Particle irradiation is largely used for controlling the carrier lifetimes in silicon power devices. In this paper a model is presented describing the effects of lifetime degradation due to particle irradiation, both in steady-state and transient conditions. By way of example, the model is applied to investigate the switching characteristics of an α-particle irradiated power diode.


Carrier Lifetime Anodic Voltage Power Device Occupation Probability Particle Irradiation 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • L. Colalongo
    • 1
  • M. Valdinoci
    • 1
  • M. Rudan
    • 1
  1. 1.Dept. of ElectronicsUniversity of BolognaBolognaItaly

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