Modeling and Simulation of Oxygen Precipitation in CZ Silicon

  • B. G. Ko
  • S. H. Yoon
  • K. D. Kwack
Conference paper


This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates are newly derived and inserted into a set of chemical rate equations(CREs) and a Fokker-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in order to calculate oxygen depth profile and oxygen precipitates density more precisely.


Dissolution Rate Detailed Balance Oxygen Solubility Bulk Region Interstitial Oxygen 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • B. G. Ko
    • 1
  • S. H. Yoon
    • 2
  • K. D. Kwack
    • 1
  1. 1.Department of Electronic EngineeringHanyang UniversitySeoulKorea
  2. 2.Electronic DepartmentDoowon Institute of TechnologyJuksan, AnsungKorea

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