Abstract
This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates are newly derived and inserted into a set of chemical rate equations(CREs) and a Fokker-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in order to calculate oxygen depth profile and oxygen precipitates density more precisely.
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© 1998 Springer-Verlag/Wien
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Ko, B.G., Yoon, S.H., Kwack, K.D. (1998). Modeling and Simulation of Oxygen Precipitation in CZ Silicon. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_96
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_96
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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