Advertisement

Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells

  • F. Schuler
  • P. Klein
  • K. Hoffmann
  • O. Kowarik
Conference paper

Abstract

To ensure a data retention time of e.g. 10 years a maximum allowed floating gate doping concentration can not be exceeded. The data retention time can be improved by reducing the floating gate doping concentration. This reduction causes a so far negligible depletion effect in the floating gate reducing the V T -shift by approximately 1.5 Volts at a floating gate doping of 3.1019 cm-3. A trade-off will be discussed.

Keywords

Doping Concentration Voltage Drop Poly Silicon Depletion Region Tunnel Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    H. Watanabe et al., Scaling of Tunnel Oxide Thickness for Flash EEPROMs Realizing Stress-Induced Leakage Current Reduction, Symposium on VLSI Technology Digest of Technical Papers, p. 47. 1994Google Scholar
  2. [2]
    N. D. Arora, R. Rios and C.-L. Huang, Modeling the Poly silicon Depletion Effect and Its Impact on Submicrometer CMOS Circuit Performance. Transactions on Electron Devices, vol. 42, No. 5, May 1995Google Scholar
  3. [3]
    Luey Chwan Liong and Po-ching Liu, A Theoretical Model for the Current-Voltage Characteristics of a Floating-Gate EEPROM Cell, Transactions on Electron Devices, vol. 40, no. 1, January 1993 Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • F. Schuler
    • 1
  • P. Klein
    • 2
  • K. Hoffmann
    • 1
  • O. Kowarik
    • 1
  1. 1.ET4University of Bundeswehr MunichNeubibergGermany
  2. 2.Siemens AGMunichGermany

Personalised recommendations