Abstract
To ensure a data retention time of e.g. 10 years a maximum allowed floating gate doping concentration can not be exceeded. The data retention time can be improved by reducing the floating gate doping concentration. This reduction causes a so far negligible depletion effect in the floating gate reducing the V T -shift by approximately 1.5 Volts at a floating gate doping of 3.1019 cm-3. A trade-off will be discussed.
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References
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© 1998 Springer-Verlag/Wien
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Schuler, F., Klein, P., Hoffmann, K., Kowarik, O. (1998). Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_92
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_92
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
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