Modeling of Temperature Dependence of a Floating Pad Structure’s RF Properties
Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.
KeywordsNegative Temperature Coefficient Input Capacitance Multi Chip Module High Frequency Capacitance Calibration Substrate
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