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Modeling of Temperature Dependence of a Floating Pad Structure’s RF Properties

  • Tarja Riihisaari
  • Hannu Ronkainen
  • Hannu Kattelus
  • Hannu Hakojärvi
Conference paper

Abstract

Temperature dependence of silicon MCM substrate RF properties is studied by modeling simple I/O structures. Both normal RF IC and high resistivity silicon substrates were processed. Lumped element equivalent circuit parameters were extracted for temperature range -60° C – +90° C.

Keywords

Negative Temperature Coefficient Input Capacitance Multi Chip Module High Frequency Capacitance Calibration Substrate 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Tarja Riihisaari
    • 1
  • Hannu Ronkainen
    • 1
  • Hannu Kattelus
    • 1
  • Hannu Hakojärvi
    • 2
  1. 1.Microelectronics Tekniikantie 17VTT ElectronicsEspooFinland
  2. 2.VTT Information Technology Otakaari 7AEspooFinland

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