Point defect parameter extraction through their reaction with dislocation loops
In this work we use dislocation loops to monitor the interstitial injection during the oxidation of silicon at low temperatures (850 – 950 °C). The interstitials captured by the loops are measured using Transmission Electron Microscopy and the number of silicon atoms that are injected into the silicon bulk during oxidation can be estimated. A model is then developed that considers the above measurements and accounts for the silicon supersaturation in the loop layer and subsequently for the flux of injected interstitials during oxidation that is compared with SUPREM IV results. Simulation of loop evolution using FLOOPS simulator permits an estimation of the capturing efficiency of loops in the temperature range of experiments.
KeywordsSilicon Atom Dislocation Loop Capture Efficiency Silicon Bulk Supersaturation Ratio
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