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Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules

  • P. Böhm
  • E. Falck
  • J. Sigg
  • G. Wachutka
Conference paper

Abstract

A practical methodology for the analysis of distributed parasitic effects is presented and demonstrated for bus bars connecting fast switching semiconductor devices in high power modules. Our study shows that only a full three-dimensional transient simulation of the entire module under realistic switching conditions can give the necessary insight in the time-dependent electromagnetic behavior. In order to illustrate the method, a problem encountered in an industrial application is solved.

Keywords

Contact Electrode Parasitic Effect Attached Device Terminal Current Piecewise Uniform 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    O. Bíró and K. Preis, “On the Use of the Magnetic Vector Potential in the Finite Element Analysis of Three-Dimensional Eddy Currents,” IEEE Trans. Magn., vol. 25, 3145 – 3159, 1989.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • P. Böhm
    • 1
  • E. Falck
    • 1
  • J. Sigg
    • 2
  • G. Wachutka
    • 1
  1. 1.Institute for Physics of ElectrotechnologyMunich University of TechnologyMunichGermany
  2. 2.Siemens AGCorporate TechnologyMunichGermany

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