Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules
A practical methodology for the analysis of distributed parasitic effects is presented and demonstrated for bus bars connecting fast switching semiconductor devices in high power modules. Our study shows that only a full three-dimensional transient simulation of the entire module under realistic switching conditions can give the necessary insight in the time-dependent electromagnetic behavior. In order to illustrate the method, a problem encountered in an industrial application is solved.
KeywordsContact Electrode Parasitic Effect Attached Device Terminal Current Piecewise Uniform
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