Abstract
We describe the transport properties of hot electrons in silicon through a completely closed hydrodynamic (HD) model, without any free parameter. We apply our model to the simulation of some n + nn + devices at temperatures of 300K and 77K. Results are very accurate and the computation times are of few seconds for a picosecond of simulation.
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© 1998 Springer-Verlag/Wien
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Trovato, M., Falsaperla, P. (1998). Hydrodynamic model for hot carriers in silicon based on the maximum entropy formalism. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_80
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_80
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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