Hydrodynamic model for hot carriers in silicon based on the maximum entropy formalism
We describe the transport properties of hot electrons in silicon through a completely closed hydrodynamic (HD) model, without any free parameter. We apply our model to the simulation of some n + nn + devices at temperatures of 300K and 77K. Results are very accurate and the computation times are of few seconds for a picosecond of simulation.
KeywordsHydrodynamic Model Maximum Entropy Principle Boltzmann Transport Equation Extend Thermodynamic Overshoot Velocity
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