Hydrodynamic model for hot carriers in silicon based on the maximum entropy formalism

  • M. Trovato
  • P. Falsaperla
Conference paper


We describe the transport properties of hot electrons in silicon through a completely closed hydrodynamic (HD) model, without any free parameter. We apply our model to the simulation of some n + nn + devices at temperatures of 300K and 77K. Results are very accurate and the computation times are of few seconds for a picosecond of simulation.


Hydrodynamic Model Maximum Entropy Principle Boltzmann Transport Equation Extend Thermodynamic Overshoot Velocity 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • M. Trovato
    • 1
  • P. Falsaperla
    • 2
  1. 1.Dipartimento di MatematicaUniversità di CataniaCataniaItaly
  2. 2.Dipartimento di FisicaUniversità di CataniaCataniaItaly

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