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Hydrodynamic model for hot carriers in silicon based on the maximum entropy formalism

  • M. Trovato
  • P. Falsaperla
Conference paper

Abstract

We describe the transport properties of hot electrons in silicon through a completely closed hydrodynamic (HD) model, without any free parameter. We apply our model to the simulation of some n + nn + devices at temperatures of 300K and 77K. Results are very accurate and the computation times are of few seconds for a picosecond of simulation.

Keywords

Hydrodynamic Model Maximum Entropy Principle Boltzmann Transport Equation Extend Thermodynamic Overshoot Velocity 
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References

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    E.T. Jaynes Papers on Probability, Statistics, and Statistics, edited by R. D. Rosenkrantz (Reidel, Dordrect, 1983).Google Scholar
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    I. Müller, T. Ruggeri, Extended Thermodynamics, ( Springer-Verlag, Berlin. 1993 ).MATHGoogle Scholar
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    P. Falsaperla and M. Trovato, A hydrodynamic model for transport in semiconductors without free parameters, proceedings of IWCE-5, to be published in VLS Design (1998).Google Scholar
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    M. Trovato and P. Falsaperla, Phys. Rev. B 57 (8), 4456 (1998) and Erratum (to be published)CrossRefGoogle Scholar
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    C. Jacoboni, L. Reggiani, Rev. Mod. Phys. 55, 645 (1983).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • M. Trovato
    • 1
  • P. Falsaperla
    • 2
  1. 1.Dipartimento di MatematicaUniversità di CataniaCataniaItaly
  2. 2.Dipartimento di FisicaUniversità di CataniaCataniaItaly

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