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Simulation of AVC Measurements

  • M. Rottinger
  • N. Seifert
  • S. Selberherr
Conference paper

Abstract

The recently developed Auger Voltage Contrast (AVC) method is an electronic probing technique for rapid delineation of pn-junctions. The simulation of AVC measurements can improve the understanding of the involved physics and facilitate the development of procedures for automatic extraction of the junction position from measurement data. This paper describes the simulation of AVC measurements using a device simulator.

Keywords

Surface Potential Beam Current Incident Electron Electron Beam Current Doping Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. [1]
    W. Werner, H. Lakatha, H. Smith, L. LeTarte, V. Ambrose, and J. Baker, “Auger Voltage Contrast Imaging for the Delineation of 2-Dimensional Junctions in Cross- sectioned MOS Devices,” J.Vac.Sci.Technol., accepted for publication 1998.Google Scholar
  2. [2]
    T. Simlinger, H. Kosina, M. Rottinger, and S. Selberherr, “MINIMOS-NT: A Generic Simulator for Complex Semiconductor Devices,” in 25th European Solid State Device Research Conference(H. de Graaff and H. van Kranenburg, eds.), pp. 83–86, 1995.Google Scholar
  3. [3]
    D. Kyser and D. Wittry, “Spatial Distribution of Excess Carriers in Electron-Beam Excited Semiconductors,” Proc.IEEE, pp. 733–734, May 1967.Google Scholar
  4. [4]
    H. Wagner, A. Pfeiffer, C. Schiebl, and W. Werner, “Monte Carlo Simulation of Electron Scattering for Arbitrary 2D Structures Using a Modified Quadtree Geometry Discretization.,” Microchim. Acta, vol. 13, p. 533, 1995.Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • M. Rottinger
    • 1
  • N. Seifert
    • 2
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria
  2. 2.Digital SemiconductorHudsonUSA

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