Abstract
The recently developed Auger Voltage Contrast (AVC) method is an electronic probing technique for rapid delineation of pn-junctions. The simulation of AVC measurements can improve the understanding of the involved physics and facilitate the development of procedures for automatic extraction of the junction position from measurement data. This paper describes the simulation of AVC measurements using a device simulator.
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References
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© 1998 Springer-Verlag/Wien
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Rottinger, M., Seifert, N., Selberherr, S. (1998). Simulation of AVC Measurements. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_72
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_72
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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