Quasi 3—D Simulation of Quantum Well DFB Lasers

  • B. Witzigmann
  • F. Oyafuso
  • K. Hess
Conference paper


A quasi—3 D simulation for quantum well (QW) distributed feedback (DFB) laser diodes is presented. Longitudinal effects such as the nonuniformity of the optical intensity, local gain and spontaneous emission are considered as well as lateral effects such as current spreading and quantum carrier capture. The simulation is performed by solving several 2—D cross—sections using Minilase II and a 1—D longitudinal solver in a self—consistent fashion.

As an example an analysis of spatial hole burning in a ⋋/4 phase shifted DFB laser id given. It is shown that spatial hole burning (SHB) results in a local gain saturation and is mainly restricted to electrons and holes within the QW.


Spontaneous Emission Quantum Well Optical Intensity Open Resonator Cavity Axis 
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  1. [1]
    T. Makino, “Amplified Spontaneous Emission Model for Quantum-Well Distributed Feedback Lasers”, Journal of Quantum Electronics, June 1997 Vol. 33, No 6, pg. 1010–1017.CrossRefGoogle Scholar
  2. [2]
    B. Tromberg, H. Olesen, X. Pan, Theory of Linewidth for Multielectrode Laser Diodes with Spatially Distributed Noise Sources, IEEE Journal of Quantum ELectronics, February 1991 Vol. 27, No.2, pg. 178–192.CrossRefGoogle Scholar
  3. [3]
    M. Grupen, K. Hess, “Simulation of Carrier Transport and Nonlinearities in Quantum Well Laser Diodes”, IEEE Journal of Quantum Electronics, January 1998, Vol. 34, No. 1, pg. 120–140.CrossRefGoogle Scholar
  4. [4]
    C.H. Henry, “Theory of Spontaneous Emission Noise in Open Resonators and its Application to Lasers and Optical Amplifiers”, Journal of Lightwave Technology, March 1986, Vol. LT-4, No. 3, pg. 288–297.CrossRefGoogle Scholar
  5. [5]
    S. Selberherr, “Analysis and Simulation of Semiconductor Devices”, Springer Verlag, Wien-New York, 1984.CrossRefGoogle Scholar
  6. [6]
    M. Grupen, K. Hess, and G.H. Song, “Simulation of transport over heterojunctions”, Proc. 4th International Conf. Simul. Semicon. Dev. Process., Zurich, vol 4, 303–311 (1991).Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • B. Witzigmann
    • 1
  • F. Oyafuso
    • 2
  • K. Hess
    • 2
  1. 1.Integrated Systems LaboratoryETH ZürichZürichSwitzerland
  2. 2.Beckman Institute for Advanced Science and TechnologyUrbanaUSA

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