Abstract
Flow and heat transfer in a vertical reactor used for the MOCVD growth of zirconium based compounds is studied by computational modeling. The verification of computational predictions is done by temperature measurements. Flow regimes are compared with respect to the flow structure and temperature distribution in the reactor. The modeling study results in better understanding of the processes that determine growth rate uniformity and reproducibility.
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© 1998 Springer-Verlag/Wien
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Dauelsberg, M., Kadinski, L., Schmidt, C., Allenbach, C., Morstein, M. (1998). Modeling of flow and heat transfer in a vertical reactor for the MOCVD of zirconium-based coatings. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_7
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_7
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
eBook Packages: Springer Book Archive