A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs

  • E. Gondro
  • F. Schuler
  • P. Klein
Conference paper


A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3 v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.


Gate Bias Resistance Model Interface State Density Electron Accumulation Source Side 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • E. Gondro
    • 1
  • F. Schuler
    • 1
  • P. Klein
    • 2
  1. 1.Institute of ElectronicsUniversity of BundeswehrNeubibergGermany
  2. 2.Siemens AGMunichGermany

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