Advertisement

A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs

  • E. Gondro
  • F. Schuler
  • P. Klein
Conference paper

Abstract

A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3 v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.

Keywords

Gate Bias Resistance Model Interface State Density Electron Accumulation Source Side 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    P. Klein:A Consistent Parameter Extraction Method for Deep Submicron MOSFETs; ESSDERC Stuttgart 1997Google Scholar
  2. [2]
    H. Murrmann and D. Widmann: Current Crowding on Metal Contacts to Planar Devices; IEEE Transactions on Electron Devices 16 1969; pp. 1022–1024CrossRefGoogle Scholar
  3. [3]
    K. K. Ng and W. T. Lynch: Analysis of the Gate-Voltage-Dependent Series Resistance of MOSFET’s; IEEE Transactions on Electron Devices 33 1986; pp. 965–972CrossRefGoogle Scholar
  4. [4]
    BSIM3 Version 3.1 Manual; Department of Electrical Engineering and Computer Science Californien, USA 1997Google Scholar
  5. [5]
    G.J.Hu, C.Chang and Y. Chia: Gate-Voltage-Dependent Effective Channel Length and Series Resistance of LDD MOSFET’s; IEEE Transactions on Electron Devices 34 1987; pp. 2469–2477CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • E. Gondro
    • 1
  • F. Schuler
    • 1
  • P. Klein
    • 2
  1. 1.Institute of ElectronicsUniversity of BundeswehrNeubibergGermany
  2. 2.Siemens AGMunichGermany

Personalised recommendations