A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs
A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3 v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.
KeywordsGate Bias Resistance Model Interface State Density Electron Accumulation Source Side
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