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Characterisation of the Corner Effect by composed 2D Device Simulations

Conference paper

Abstract

In scaled down MOSFET’s isolated by trenches the threshold voltage is dominated by the corner effect. In this work a method is presented which allows to compose the gate characteristic of corner devices from 2D simulations. The composed results are compared with 3D simulations. The method has been applied successfully for gate lengths and gate widths down to.4µm and for bulk voltages down to -3.3V (nMOSFET). In cases where no shoulder is observed in the gate characteristic the presence of the corner effect can be identified by the comparison of 2D and composed results without expansive 3D simulations.

Keywords

Threshold Voltage Gate Length Gate Width Corner Effect Pronounced Shoulder 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. /1/.
    Technology Modeling Associates, Sunnyvale CAGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • F. Lau
    • 1
  1. 1.SIEMENS AG, Corporate ResearchMunichGermany

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