Abstract
Experimentally observed asymmetric breakdown characteristics of shallow trench isolation are investigated by using TCAD. Both transient enhanced diffusion of boron and phosphorus and deactivation of phosphorus piled up at the trench bottom are the main causes of the asymmetry. Several techniques which reduce the asymmetry are proposed and their effects are compared by using TCAD.
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© 1998 Springer-Verlag/Wien
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Kumashiro, S., Kawaguchi, H., Imai, K., Matsumoto, H. (1998). Analysis of the asymmetric breakdown characteristics of trench isolation structure by using TCAD. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_65
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_65
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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