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Simulation of Dynamic Ionization Effects in 6H-SiC Devices

  • M. Lades
  • G. Wachutka
Conference paper

Abstract

A numerically robust and physically consistent implementation of the rate equations describing the dynamics of discrete impurity states (deep traps) in the band gap has been accomplished within the framework of an advanced drift-diffusion model. Conceiving the dopants in SiC as such energy states, the impact of long ionization time constants on the device operation has been demonstrated.

Keywords

Space Charge Region Electric Field Distribution Deep Trap Maximum Electric Field Incomplete Ionization 
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References

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    F. Pfirsch, M. Ruff, IEEE Trans. Electron Devices, vol. 40, 1993.Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • M. Lades
    • 1
  • G. Wachutka
    • 1
  1. 1.Institute for Physics of ElectrotechnologyMunich University of TechnologyMunichGermany

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