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Hydrodynamic Mixed-Mode Simulation

  • T. Grasser
  • V. Palankovski
  • G. Schrom
  • S. Selberherr
Conference paper

Abstract

Recent advances in development of semiconductor devices lead to more and more complex device structures. This concerns device geometry as well as the combination of different materials. Due to the rapid reduction of device geometries, the models describing the device physics increase in complexity. To gain additional insight into the performance of devices under realistic dynamic boundary conditions imposed by a circuit, mixed-mode simulation has proven to be invaluable. We present our approach of handling the complex situations arising from these problems. Since advanced SiGe Heterojunction Bipolar Transistors (SiGe HBTs) are currently amongst the fastest semiconductor devices, we demonstrate the capabilities of our simulator by simulating a 5-stage Current Mode Logic (CML) ring oscillator. Accurate simulation of HBT circuits must account for non-local effects such as velocity overshoot which calls for hydrodynamic (HD) mixed-mode simulation.

Keywords

Ring Oscillator Node Voltage Drift Diffusion Velocity Overshoot Quantity Class 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    T. Simlinger, R. Deutschmann, C. Fischer, H. Kosina, and S. Selberherr, “Two- Dimensional Hydrodynamic Simulation of High Electron Mobility Transistors Using a Block Iterative Scheme in Combination with Full Newton Method,” in Fourth Int. Conf, on Solid-State and Integrated-Circuit Technology(G. Baldwin, Z. Li, C. Tsai, and J. Zhang, eds.), (Beijing, China), pp. 589–591, 1995.Google Scholar
  2. [2]
    B. Neinhüs, P. Graf, S. Decker, and B. Meinerzhagen, “Examination of Transient Drift-Diffusion and Hydrodynamic Modeling Accuracy for SiGe HBTs by 2D Monte-Carlo Device Simulation,” in 27th European Solid-State Device Research Conference(H. Grünbacher, ed.), ( Stuttgart, Germany ), pp. 188 – 191, Editions Frontieres, 1997.Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • T. Grasser
    • 1
  • V. Palankovski
    • 1
  • G. Schrom
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria

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