Simulation of Be diffusion in the base layer of InGaAs/InP Heterojunction Bipolar Transistors
In order to improve InGaAs/InP device fabrication processes and effectively control the performances of Heterojunction Bipolar Transistors (HBTs), one should avoid the undesired diffusion of p-type dopant during high-temperature device fabrication which often degrades the performances of compounds . Consequently, the understanding and the control of p-type dopant diffusion in InGaAs epitaxial layers are necessary. All available beryllium diffusion profiles in InGaAs epitaxial layers have been simulated by using the Kick-out model Be i 0 ⇔ Be s − + I III + .
KeywordsBipolar Transistor Diffusion Profile Calculated Curf Simulated Profile Heterojunction Bipolar Transistor
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