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Simulation of Be diffusion in the base layer of InGaAs/InP Heterojunction Bipolar Transistors

  • J. Marcon
  • S. Gautier
  • S. Koumetz
  • K. Ketata
  • M. Ketata
Conference paper

Abstract

In order to improve InGaAs/InP device fabrication processes and effectively control the performances of Heterojunction Bipolar Transistors (HBTs), one should avoid the undesired diffusion of p-type dopant during high-temperature device fabrication which often degrades the performances of compounds [1]. Consequently, the understanding and the control of p-type dopant diffusion in InGaAs epitaxial layers are necessary. All available beryllium diffusion profiles in InGaAs epitaxial layers have been simulated by using the Kick-out model Be i 0 ⇔ Be s + I III + .

Keywords

Bipolar Transistor Diffusion Profile Calculated Curf Simulated Profile Heterojunction Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • J. Marcon
    • 1
    • 2
  • S. Gautier
    • 2
  • S. Koumetz
    • 2
  • K. Ketata
    • 2
  • M. Ketata
    • 2
  1. 1.Ecole Supérieure d’Ingénieurs en Génie ElectriqueMont Saint AignanFrance
  2. 2.Laboratoire Electronique Microtechnologie InstrumentationUniversité de Rouen-IUTMont Saint AignanFrance

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