Anisotropic Ballistic In—Plane Transport of Electrons in Strained Si
Stationary velocity—field characteristics and transient velocity overshoot along the 〈100〉 and 〈110〉 field directions are investigated at 300 K with full—band Monte Carlo simulation for electrons in unstrained and (001)-strained Si grown on a Si0.7Ge0.3 substrate. A pronounced anisotropy of more than 30% is found for the overshoot peak in strained Si, attaining in the advantageous 〈100〉 direction a peak value of 3.4 x 107 cm/s for a suddenly applied field of 100 kV/cm. The energy relaxation time, necessary for hydrodynamic device simulation of the overshoot effect, changes from 0.3 ps in unstrained Si to 0.4 ps in strained Si.
KeywordsDrift Mobility Full Band Velocity Overshoot Energy Relaxation Time Nanometer Regime
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