Abstract
Stationary velocity—field characteristics and transient velocity overshoot along the 〈100〉 and 〈110〉 field directions are investigated at 300 K with full—band Monte Carlo simulation for electrons in unstrained and (001)-strained Si grown on a Si0.7Ge0.3 substrate. A pronounced anisotropy of more than 30% is found for the overshoot peak in strained Si, attaining in the advantageous 〈100〉 direction a peak value of 3.4 x 107 cm/s for a suddenly applied field of 100 kV/cm. The energy relaxation time, necessary for hydrodynamic device simulation of the overshoot effect, changes from 0.3 ps in unstrained Si to 0.4 ps in strained Si.
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Bufler, F.M., Keith, S., Meinerzhagen, B. (1998). Anisotropic Ballistic In—Plane Transport of Electrons in Strained Si. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_60
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_60
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