Advertisement

Influence of the Ge concentration on the threshold voltage and subthreshold slope of nanoscale vertical Si/SiGe pMOSFETs

  • N. Collaert
  • K. De Meyer
Conference paper

Abstract

An analytical model has been set up to investigate the influence of SiGe in the source on the threshold voltage and subthreshold behaviour of heterojunction pMOSFETs. The use of SiGe in the source region of the pMOSFET introduces an extra degree of freedom for fine-tuning of the subthreshold and on-state behaviour of the devices. It will be shown that the short channel behaviour of these devices is greatly improved in comparison with vertical homojunction Si structures. Careful design and optimisation of these devices show that the use of Ge is only advantageous for sub 0.1 µm devices. Structures with channel lengths down to 30 nm exhibit promising characteristics.

Keywords

Threshold Voltage Channel Length Short Channel SiGe Layer Subthreshold Slope 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    M. Yoshimi, M. Terauchi, A. Murakoshi, M. Takahashi, K. Matsuzawa, N. Shigyo and Y. Ushiku, “Technology Trends of Silicon-On-Insulator—Its Advantages and Problems to be Solved,” IEDM, pp. 429–432, 1994.Google Scholar
  2. [2]
    S.A. Hareland, A.F. Tash and C.M. Maziar, “New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling,”Electronics Letters, vol. 29, no. 21, pp. 1894–1895, 1993.CrossRefGoogle Scholar
  3. [3]
    U.S. Provisional Patent Application Number: 60/001,022; July 7th, 1995, C.J.R.P. Augusto, IMEC.Google Scholar
  4. [4]
    N. Collaert and K. De Meyer, “Current calculation of a submicron Si/SiGe heterojunction MOSFET,” Proceedings of the International Semiconductor Device Research Symposium, pp. 517–520, 1997.Google Scholar
  5. [5]
    SIA roadmap, Semiconductor Industry Association, 1997.Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • N. Collaert
    • 1
  • K. De Meyer
    • 1
    • 2
  1. 1.IMEC, ASP divisionLeuvenBelgium
  2. 2.ESAT, K.U.LeuvenHeverleeBelgium

Personalised recommendations