Abstract
This is the first consistent simulation result to show that the quantization of carrier energy state in the channel is responsible for measured oscillations of the transconductance in scaled silicon-on-insulator (SOI) n-MOSFETs. Local changes in the Si layer thickness due to Si/SiO2 interface roughness are already sufficient to shift the energy levels of these states.
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References
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© 1998 Springer-Verlag/Wien
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Takahashi, T., Miura-Mattausch, M., Omura, Y. (1998). Origin of Drain-Current Oscillation on Ultra-Thin-SOI n-MOSFET. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_54
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_54
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