Origin of Drain-Current Oscillation on Ultra-Thin-SOI n-MOSFET

  • T. Takahashi
  • M. Miura-Mattausch
  • Y. Omura
Conference paper


This is the first consistent simulation result to show that the quantization of carrier energy state in the channel is responsible for measured oscillations of the transconductance in scaled silicon-on-insulator (SOI) n-MOSFETs. Local changes in the Si layer thickness due to Si/SiO2 interface roughness are already sufficient to shift the energy levels of these states.


Schrodinger Equation Interface Roughness Subthreshold Region Gate Oxide Thickness Atomic Force Microscope Picture 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Y. Omura, K. Kurihara, Y. Takahashi, T. Ishiyama, Y. Nakajima and K. Izumi, “50-nm Channel nMOSFET/SIMOX with an Ultrathin 2- or 6-nm Thick Silicon Layer and Their Significant Features of Operations,” IEEE Electron Device Lett, vol. 18, no. 5, pp. 190–193, 1997.CrossRefGoogle Scholar
  2. [2]
    D. Vasileska, D. K. Schroder and D. K. Ferry, “Scaled Silicon MOSFET’s: Degradation of the Total Gate Capasitance,” IEEE Trans. Electron Devices, vol. 44, no. 4, pp. 584–587, 1997.CrossRefGoogle Scholar
  3. [3]
    S. Yamakawa, H. Ueno, K. Taniguchi and C. Hamaguchi, “Study of interface roughness dependence of electron mobility in Si inversion layers using the Monte Carlo method,” J. Appl Phys., vol. 79, no. 2, pp. 911–916, 1996.CrossRefGoogle Scholar
  4. [4]
    A. Herstein, “Quantum interface in ultrashort channel length silicon metal-oxide- semiconductor field-effect transistor,” Appl. phys. Lett., vol. 59, no. 16, pp. 2028–2030, 1991.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • T. Takahashi
    • 1
  • M. Miura-Mattausch
    • 1
  • Y. Omura
    • 2
  1. 1.Department of elctrical EngineeringHiroshima UniversityHigashi-HiroshimaJapan
  2. 2.Department of elctrical EngineeringKansai UniversitySuita, OsakaJapan

Personalised recommendations