Grid Adaptation for Device Simulation According to the Dissipation Rate
In this, paper a novel approach to grid adaptation for the Scharfetter-Gummel (SG) boxmethod discretization of the drift—diffusion model in semiconductor device simulation is proposed. In most simulation cases one is interested in accurate contact currents and the SG—discretization guarantees stability. There is no need to resolve all internal and boundary layers of the solution. The dissipation rate of the system offers a natural weighting of the contact currents and is therefore utilized as the main adaptation instrument. Neglecting the local discretization errors of the discrete solutions complicates the interpolation of the solution onto the adaptively generated grid. Properly reduced equations, including the solution of local Dirichlet problems, are used to improve the initial guess.
KeywordsDissipation Rate Posteriori Error Adaptive Grid Versus Figure Contact Current
Unable to display preview. Download preview PDF.
- P.Ciampolini, A. Forghieri, A. Pieratoni, M. Rudan and G. Baccarani, “Adaptive Mesh Generation Preserving the Quality of the Initial Grid,” in Simulation of Semiconductor Devices and Processes(G. Baccarani and M. Rudan, eds.), SISDEP 88, 1988.Google Scholar
- [4.R. Verfürth, “A review of a posteriori error estimation and adaptive mesh- refinement techniques,” Wiley, Teubner, 1996.Google Scholar
- DESSIS Reference Manual, ISE Integrated System Engineering AG, Zürich, Switzerland, 1994–1998.Google Scholar