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A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation

  • G. Garretón
  • L. Villablanca
  • N. Strecker
  • W. Fichtner
Conference paper

Abstract

We present the latest results of our research regarding meshes suitable for both process and device simulation. Two major results are discussed in this paper: a consistent multi-dimensional mesh quality definition and a new hybrid multi-dimensional mesh generation approach. The consistent definition achieved is based on the conditions imposed by the Box integration method applied for both semiconductor process and device equations. The hybrid approach developed reaches a consistent mesh quality in all dimensions and it overcomes the severe limitations of our former mesh generators. Finally, it has been experimentally demonstrated that both the unified conditions and the hybrid approach are suitable for stable discretization schemes for device simulations based on the Box method.

Keywords

Mesh Quality Swiss Federal Institute Device Simulation Obtuse Angle Semiconductor Process 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • G. Garretón
    • 1
  • L. Villablanca
    • 1
  • N. Strecker
    • 1
  • W. Fichtner
    • 1
  1. 1.Integrated Systems LaboratorySwiss Federal Institute of TechnologyZürichSwitzerland

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