A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation
We present the latest results of our research regarding meshes suitable for both process and device simulation. Two major results are discussed in this paper: a consistent multi-dimensional mesh quality definition and a new hybrid multi-dimensional mesh generation approach. The consistent definition achieved is based on the conditions imposed by the Box integration method applied for both semiconductor process and device equations. The hybrid approach developed reaches a consistent mesh quality in all dimensions and it overcomes the severe limitations of our former mesh generators. Finally, it has been experimentally demonstrated that both the unified conditions and the hybrid approach are suitable for stable discretization schemes for device simulations based on the Box method.
KeywordsMesh Quality Swiss Federal Institute Device Simulation Obtuse Angle Semiconductor Process
Unable to display preview. Download preview PDF.
- ISE Integrated Systems Engineering, Zürich, Switzerland, ISE TCAD Software Manuals, release 4.1 ed., 1997.Google Scholar
- G. Heiser, Design and Implementation of a Three Dimensional General Purpose Semiconductor Device Simulator. PhD thesis, Swiss Federal Institute of Technology, 1991 Google Scholar
- G. Garretón, A hybrid approach for 2D and 3D mesh generation in semiconductors. PhD thesis, Swiss Federal Institute of Technology, 1998. To be published.Google Scholar
- G. Garretón, L. Villablanca, N. Strecker, and W. Fichtner, “Unified grid generation and adaptation for device simulation,” in SISDEP, ( Erlangen, Germany ), September 1995.Google Scholar