3D Modeling of Sputter Process with Monte Carlo Method

  • Yongchan Ban
  • Taeyoung Won
Conference paper


In this paper, a rigorous three-dimensional Monte Carlo calculation to simulate the sputter yield as a function of the incident ion energy and the incident angle as well as the atomic ejection distribution of the target is presented. The sputter yield of the target atom (Al and Cu) has been calculated for the different species of the incident atoms with the incident energy range of 10eV ~ 10KeV, which coincides with the previously reported experimental results.


Incident Angle Label Index Incident Energy Target Atom Azimuthal Symmetry 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Y. Yamamura et. al, “Energy Dependence of Ion-sputtering Yields from Monatomic Solids at Normal Incidence,” Atomic Data and Nuclear Tables, vol. 62, pp. 149, 1996CrossRefGoogle Scholar
  2. [2]
    J. F. Ziegler et. al, “The Stopping and Range of Ions in Solids,” vol. 1, New-York, Pergamon, 1985Google Scholar
  3. [3]
    J. P. Biersack, “Sputtering Studies with the Monte Carlo Program TRIM.SP,” Appl. Phys. A 34, pp. 73, 1984Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Yongchan Ban
    • 1
  • Taeyoung Won
    • 1
  1. 1.Research Institute of Semiconductor and Thin Film TechnologySchool of Electrical and Computer EngineeringInha UniversityInchunKorea

Personalised recommendations