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Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design

  • H. van Meer
  • D. Schreurs
  • K. van der Zanden
  • W. De Raedt
  • E. Simoen
  • L. Kaufmann
Conference paper

Abstract

A bias-dependent low-frequency noise model of InP based InAlAs/InGaAs HEMTs has been acquired by direct implementation of low-frequency noise measurements in a circuit simulator in order to enable phase noise simulations of non-linear microwave applications such as mixers and oscillators. A 20 GHz coplanar oscillator has been designed and realised in order to validate the obtained simulation results. The simulated phase noise level at 100 kHz from the carrier is -83.6 dBc/Hz, which agrees well with the measured value of -77.1 dBc/Hz.

Keywords

Phase Noise Current Noise Monolithic Microwave Integrate Circuit Phase Noise Spectrum Single Side Band 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • H. van Meer
    • 1
  • D. Schreurs
  • K. van der Zanden
    • 1
  • W. De Raedt
    • 1
  • E. Simoen
    • 1
  • L. Kaufmann
    • 2
  1. 1.IMECLeuvenBelgium
  2. 2.Electronic Devices Group (EEA)Eindhoven University of TechnologyEindhovenThe Netherlands

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