Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design
A bias-dependent low-frequency noise model of InP based InAlAs/InGaAs HEMTs has been acquired by direct implementation of low-frequency noise measurements in a circuit simulator in order to enable phase noise simulations of non-linear microwave applications such as mixers and oscillators. A 20 GHz coplanar oscillator has been designed and realised in order to validate the obtained simulation results. The simulated phase noise level at 100 kHz from the carrier is -83.6 dBc/Hz, which agrees well with the measured value of -77.1 dBc/Hz.
KeywordsPhase Noise Current Noise Monolithic Microwave Integrate Circuit Phase Noise Spectrum Single Side Band
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