Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques
A density-gradient (DG) model is used to calculate quantum- mechanical corrections to classical carrier transport in MOS in-version/accumulation layers. The model is compared to measured data and to a fully self-consistent coupled Schrödinger and Poisson equation (SCSP) solver. Good agreement is demonstrated for MOS capacitors with gate oxide as thin as 21 Å. It is then applied to study carrier distribution in ultra short MOSFETs with surface roughness. This work represents the first implementation of the DG formulation on multi-dimensional unstructured meshes. It was enabled by a powerful scripting approach which provides an easy-to-use and flexible framework for solving the fourth-order PDEs of the DG model.
KeywordsPoly Silicon Oxide Thickness Gate Oxide Unstructured Triangular Mesh Layer Charge Density
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