Abstract
Inversion layer mobility in extremely thin SOI MOSFETs with silicon film thickness down to 10 nm has been investigated. The Boltzmann transport equation has been solved by the Monte Carlo method. The mobility decrease appearing in devices with a silicon film thickness below 20nm is satisfactorily explained by the contribution of two scattering mechanisms: i) an increase in phonon scattering as a consequence of the greater confinement of the electrons in the thin silicon film, and ii) the increase in Coulomb scattering due to a greater number of interface traps in the buried Si-SiO2.
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Gámiz, F., López-Villanueva, J.A., Roldán, J.B., Carceller, J.E. (1998). Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_31
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_31
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