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Integration of Lithography and Etch Simulations

  • Z. Krivokapic
  • W. D. Heavlin
  • D. S. Bang
Conference paper

Abstract

In this work we report on predictions of final gate critical dimensions using lithography and plasma etch simulators integrated with a statistical simulator

Keywords

Reactor Power Exposure Dose Latin Hypercube Design Reactor Simulation Plasma Nonuniformity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Z. Krivokapic
    • 1
  • W. D. Heavlin
    • 1
  • D. S. Bang
    • 1
  1. 1.Advanced Micro DevicesSunnyvaleUSA

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