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A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation

  • V. Palankovski
  • G. Kaiblinger-Grujin
  • H. Kosina
  • S. Selberherr
Conference paper

Abstract

We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGe HBT using a hydrodynamic transport model.

Keywords

Compound Semiconductor Device Simulation Current Gain High Electron Mobility Transistor Dopant Species 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • V. Palankovski
    • 1
  • G. Kaiblinger-Grujin
    • 1
  • H. Kosina
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsViennaAustria

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