A Dopant-Dependent Band Gap Narrowing Model Application for Bipolar Device Simulation
We present a new band gap narrowing model which considers the semiconductor material and the dopant species for arbitrary finite temperatures. This unified treatment is especially useful for accurate device simulation. As a particular example we studied with our two-dimensional device simulator MINIMOS-NT the electrical behavior of a graded composition Si/SiGe HBT using a hydrodynamic transport model.
KeywordsCompound Semiconductor Device Simulation Current Gain High Electron Mobility Transistor Dopant Species
Unable to display preview. Download preview PDF.
- SILVACO International, Santa Clara, USA, ATLAS, User’s Manual, Edition 2, Mar. 1994Google Scholar
- ISE Integrated Systems Engineering AG, Zürich, Switzerland, DESSIS-ISE, ISE TCAD Release 5.0, Part 16, Mar. 1998Google Scholar
- Technology Modeling Associates, Inc., Sunnyvale, California, TMA Medici, Two- Dimensional Device Simulation Program, Version 4-0 User’s Manual, Oct. 1997Google Scholar
- J. DelAlamo, E. Swirhun, R. Swanson, “Simultaneous measuring of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type Silicon,” in Int. Electron Devices Meeting, pp. 290–293, 1985Google Scholar
- D. Ferry, Semiconductors. New York: Macmillan, 1991Google Scholar
- Z. Matutinovic.-Krstelj, V. Venkataraman, E. Prinz, J. Sturm, C.W.Magee, “A Comprehensive Study of Lateral and Vertical Current Transport in Si/Si1-xGex/Si HBT’s,” in Int. Electron Devices Meeting, pp. 87–90, 1993Google Scholar