A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations

  • Tao Chen
  • Daniel W. Yergeau
  • Robert W. Dutton
Conference paper


This paper illustrates a common mesh implementation for use in both static and moving boundary process simulations. By using a single mesh server to support the different requirements of those two types of process simulations, it eliminates many interfaces between different simulators and simplifies the simulation process flow. Each simulation module only needs to communicate directly with the mesh program through a well defined common procedure interfaces. By providing a persistent and consistent storage of mesh and field data, the mesh server also greatly reduces the possibility of data loss when transported between simulation steps.


Simulation Module Simulation Step Mesh Node Dynamic Geometry Mesh Adaptation 
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  1. [1]
    D. Adalsteinsson, J. Sethian, “A Fast Level Set Method for Propagating Interfaces,”, J. Comp. Phys., vol. 118, 1995 Google Scholar
  2. [2]
    Z. Hsiau, E. Kan, P. McVittie, R. Dutton, “Robust, Stable, and Accurate Boundary Movement for Physical Etching and Deposition Simulation”, IEEE Trans. Electron Devices, vol. 44, P.1375, September 1997 CrossRefGoogle Scholar
  3. [3]
    P. Conti, M. Tomizawa, A. Yoshi, “Generation of Oriented Three-Dimensional Delaunay Grids Suitable for the Control Volume Integration method,”, Int. J. Numer. Methods. Eng., vol. 37, p.3211, 1994 CrossRefMATHGoogle Scholar
  4. [4]
    T. Chen, D. Yergeau, R. Dutton, “Efficient 3D Mesh Adaptation in Diffusion Simulation”, Proc. SISPAD 1996 Google Scholar
  5. [5]
    DEPICT-2, Technology Modeling Associates, 1990.Google Scholar
  6. [6]
    V. Rao, T. Hughes, E. Kan, R. Dutton, “A New Numerical Formulation for Thermal Oxidation”, Proc. SISPAD 1997 Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Tao Chen
    • 1
  • Daniel W. Yergeau
    • 1
  • Robert W. Dutton
    • 1
  1. 1.CISX 305 Integrated Circuits Laboratory Dept. of Electrical Engineering StanfordUniversity StanfordUSA

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