Skip to main content

A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations

  • Conference paper
Simulation of Semiconductor Processes and Devices 1998

Abstract

This paper illustrates a common mesh implementation for use in both static and moving boundary process simulations. By using a single mesh server to support the different requirements of those two types of process simulations, it eliminates many interfaces between different simulators and simplifies the simulation process flow. Each simulation module only needs to communicate directly with the mesh program through a well defined common procedure interfaces. By providing a persistent and consistent storage of mesh and field data, the mesh server also greatly reduces the possibility of data loss when transported between simulation steps.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. D. Adalsteinsson, J. Sethian, “A Fast Level Set Method for Propagating Interfaces,”, J. Comp. Phys., vol. 118, 1995

    Google Scholar 

  2. Z. Hsiau, E. Kan, P. McVittie, R. Dutton, “Robust, Stable, and Accurate Boundary Movement for Physical Etching and Deposition Simulation”, IEEE Trans. Electron Devices, vol. 44, P.1375, September 1997

    Article  Google Scholar 

  3. P. Conti, M. Tomizawa, A. Yoshi, “Generation of Oriented Three-Dimensional Delaunay Grids Suitable for the Control Volume Integration method,”, Int. J. Numer. Methods. Eng., vol. 37, p.3211, 1994

    Article  MATH  Google Scholar 

  4. T. Chen, D. Yergeau, R. Dutton, “Efficient 3D Mesh Adaptation in Diffusion Simulation”, Proc. SISPAD 1996

    Google Scholar 

  5. DEPICT-2, Technology Modeling Associates, 1990.

    Google Scholar 

  6. V. Rao, T. Hughes, E. Kan, R. Dutton, “A New Numerical Formulation for Thermal Oxidation”, Proc. SISPAD 1997

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1998 Springer-Verlag/Wien

About this paper

Cite this paper

Chen, T., Yergeau, D.W., Dutton, R.W. (1998). A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_28

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6827-1_28

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7415-9

  • Online ISBN: 978-3-7091-6827-1

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics