Statistical Modeling based on extensive TCAD simulations Proposed methodology for extraction of Fast/Slow models and Statistical models
Determination of fast/slow models and/or statistical models as a function of process dispersions are very challenging for designing new circuits. The present paper describes a methodology to extract fast/slow models and statistical models based on extensive process/device simulation. Also, AC parameters are extracted such as drain to gate overlap capacitance of MOS transistors as a function of process parameters variations. With the help of Principle Component Analysis, it is possible to get an uncorrected set of parameter that represent electrical and SPICE parameters dispersions. This leads to a more easy analysis for providing statistical models.
KeywordsElectrical Parameter Gate Length Ring Oscillator NMOS Transistor PMOS Transistor
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