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Statistical Modeling based on extensive TCAD simulations Proposed methodology for extraction of Fast/Slow models and Statistical models

  • Eric Vandenbossche
  • George Kopalidis
  • Marnix Tack
  • Wim Schoenmaker
Conference paper

Abstract

Determination of fast/slow models and/or statistical models as a function of process dispersions are very challenging for designing new circuits. The present paper describes a methodology to extract fast/slow models and statistical models based on extensive process/device simulation. Also, AC parameters are extracted such as drain to gate overlap capacitance of MOS transistors as a function of process parameters variations. With the help of Principle Component Analysis, it is possible to get an uncorrected set of parameter that represent electrical and SPICE parameters dispersions. This leads to a more easy analysis for providing statistical models.

Keywords

Electrical Parameter Gate Length Ring Oscillator NMOS Transistor PMOS Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    D. A. Hanson et al., IEEE Trans, on Semi. Manuf. Vol.9, pp478Google Scholar
  2. 2.
    E. Vandenbossche et al., IEDM’95Google Scholar
  3. 3.
    E. Vandenbossche et al., ESSDERC’96Google Scholar
  4. 4.
    SILVACO manual 1997.Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Eric Vandenbossche
    • 1
  • George Kopalidis
    • 2
  • Marnix Tack
    • 1
  • Wim Schoenmaker
    • 2
  1. 1.ALCATEL MicroElectronicsOudenaardeBelgium
  2. 2.IMEC vzwLeuvenBelgium

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