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Rigorous Capacitance Simulation of DRAM Cells

  • R. Martins
  • R. Sabelka
  • W. Pyka
  • S. Selberherr
Conference paper

Abstract

As dynamic RAM cell size is being scaled down, the storage capacitor design becomes more difficult because its capacitance cannot scale as much. The solutions are leading to complex structures which require an accurate description of the fabrication process, making technology CAD (TCAD) simulations necessary We introduce a set of layout-driven TCAD tools to perform capacitance extraction of three-dimensional structures created by rigorous topographic simulation, suitable in the development of new cell configurations. Simulation results are also given and compared with measured data.

Keywords

Grid Ding Parasitic Capacitor Thin Dielectric Layer Sense Amplifier Dram Cell 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • R. Martins
    • 1
  • R. Sabelka
    • 1
  • W. Pyka
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsViennaAustria

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