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Electromagnetic Simulation for the Modeling of Interconnects

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Abstract

Modeling of interconnects and packaging plays a key role in modern microelectronic circuits for many reasons which are convergent from an advanced system and economical point of view but antagonist from a physical or electromagnetic one:

For modern VLSI circuits the well known Moore’s law is used to generate road maps describing the expectations for the next generations of integrated circuits in which downsizing is accompanied by increasing circuit complexity and increased die size. This will greatly affects clock speed, interconnects and wire length as illustrated figure 1 [1]. Modern VLSI chips are expected to operate with a 1 GHz clock frequency at the end of this century with a corresponding wire length exceeding 1 km per chip.

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References

  1. Scaling theory in modern VLSI, D.K Ferry and L.A. Akers, Circuits & Devices, Sept. 97

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  2. Advanced process and manufacturing technologies for microwave/MMV modules, E. Feurer, B. Hou, M. Oppermann, 1997 IEEE MTT-S Workshop on « Low-cost millimeter wave products: design and manufacturing issues »

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© 1998 Springer-Verlag/Wien

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Rolland, P.A. (1998). Electromagnetic Simulation for the Modeling of Interconnects. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_17

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  • DOI: https://doi.org/10.1007/978-3-7091-6827-1_17

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7415-9

  • Online ISBN: 978-3-7091-6827-1

  • eBook Packages: Springer Book Archive

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