A Simple Continuum Model for Simulation of Boron Interstitial Clusters based on Atomistic Calculations
Boron exhibits anomalous diffusion during the initial phases of ion implant annealing. Boron TED is characterized by enhanced tail diffusion coupled with an electrically inactive immobile peak. The immobile peak is due to clustering of boron in the presence of excess interstitials which also enhance boron diffusion in the tail region. In this paper we present a simple model for the formation of immobile boron clusters and associated point defect interactions derived based on atomistic calculations.
KeywordsAnomalous Diffusion Cluster Precursor Atomistic Calculation Interstitial Concentration Boron Cluster
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