Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B
Utilizing buried layer substrates into which As was ion implanted at the surface, we evaluated the damage factor associated with As ion implantation, and succeeded in explaining the transient enhanced diffusion of buried layer B as well as the surface As redistribution.
KeywordsDamage Accumulation Damage Factor Diffusion Profile Short Channel Critical Dose
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