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Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B

  • Kunihiro Suzuki
  • Norbert Strecker
  • Wolfgang Fichtner
Conference paper

Abstract

Utilizing buried layer substrates into which As was ion implanted at the surface, we evaluated the damage factor associated with As ion implantation, and succeeded in explaining the transient enhanced diffusion of buried layer B as well as the surface As redistribution.

Keywords

Damage Accumulation Damage Factor Diffusion Profile Short Channel Critical Dose 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    A. Hoefler et al., J. Appl. Phys., vol. 78, p. 3671,1995CrossRefGoogle Scholar
  2. [2]
    K. Suzuki et al., IEDM Technical Digest, p. 502, 1997Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • Kunihiro Suzuki
    • 1
  • Norbert Strecker
    • 2
  • Wolfgang Fichtner
    • 2
  1. 1.ULSI Technology LabFujitsu Laboratories LtdJapan
  2. 2.Swiss Federal Institute of TechnologyIntegrated Systems LaboratoryZurichSwitzerland

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