Dynamics of Arsenic dose loss at the SiO2 interface during TED
The transient behavior of arsenic dose loss at the silicon-SiO2 interface during transient enhanced diffusion has been studied. Careful sample preparation and high precision surface SIMS are successfully used to achieve highly reproducible and accurate dose measurements. Effects of differention implantation and annealing conditions on dose loss are studied. A dopant trapping/detrapping model at the interface is used to simulate the experimental results.
KeywordsAnneal Time Dose Measurement Interface Trap Trap Model Solid Phase Epitaxy
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