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Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors

  • S. Marksteiner
  • H. Schäfer
  • T. F. Meister
  • A. Spitzer
Conference paper

Abstract

A simple simulation model for the in-situ doped chemical vapor deposition of Si1-xGex-epitaxial layers is presented that enables the calculation of the germanium and base doping profiles of modern rf-bipolar transistors from the process recipe, i.e. gas flows, deposition time and temperature. A first approach is based on the interpolation of experimental data characterizing the CVD-equipment. Although this gives already very good results for slowly varying GeH4-flows, abrupt turn-offs of the gas flow result in too steep profiles as compared to experiments. An extension of the model is presented that solves this problem via the introduction of a germanium surface layer that feeds a slowly decaying germanium concentration in the deposited silicon even after the germane flow has been turned off.

Keywords

TCAD Simulation Simple Simulation Model Steep Profile Process Recipe Simple Rate Equation 
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References

  1. [1]
    T.F. Meister et al. Techn. Dig. IEDM, 739 (1995)Google Scholar
  2. [2]
    N. Moriya et al. Phys. Rev. Lett. 71, 883 (1993)CrossRefGoogle Scholar
  3. [3]
    N.E.B. Cowern et. al., Phys. Rev. Lett. 72, 2585 (1994)CrossRefGoogle Scholar
  4. [4]
    M. Hane, T. Ikezawa, and H. Matsumoto, Preceed. SISPAD, 133 (1997)Google Scholar
  5. [5]
    M. Hierlemann et al. Proceed, of the 13th International Conference on Chemical Vapor Deposition, 35 (1996)Google Scholar
  6. [6]
    M. Hierlemann, C. Werner, and A. Spitzer, J. of Vacuum Science & Technology B 15, 935 (1997)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • S. Marksteiner
    • 1
  • H. Schäfer
    • 1
  • T. F. Meister
    • 1
  • A. Spitzer
    • 1
  1. 1.Corporate TechnologySiemens AGMunichGermany

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