Few-Electron Artificial Atoms
Artificial atoms, ie., bound systems of excess electrons confined in semiconductor quantum dots, are studied by the vanaUonal and Hartree Fock methods. The confinement potential is assumed to have the form of a spherS potential well of finite depth, which provides a theoretical model for eÍctron’ states in a spherical semiconductor nanocrystal embedded in an insulating matrix. For the two- and three-electron artificial atoms, we have applied the variational method and obtained the binding of both the ground states and excited states. The Hartee-Fock method has been applied to the N-electron artificial atoms with N = 1, …, 20. It is shown that the shells of the artificial atoms are filled bt electrons in the same manner like those of the natural atoms. In particular, Hund’s rule is fulfilled. The radial probability density calculated for artificial atoms is different from that for natural atoms.
KeywordsExcess Electron Trial Wave Function Confinement Potential Linear Variational Parameter Natural Atom
Unable to display preview. Download preview PDF.
- 1.For review articles, see: U. Merkt: Phys, BÍ. 47, 509 (1991)Google Scholar
- M. A. Kastner: Comments Cond. Mat. Phys. 17, 349 (1996)Google Scholar
- 3.Q. Ye, R. Tsu. and E.H. Nicollian: Phys. Rev. B44, 1806 (1991)Google Scholar
- J. Weis et al: Phys. Rev. Lett. 71, 4019 (1993)Google Scholar
- 9.B. Szafran, S. Bednarek an J. Adamowski: Proc. XXVII Int. School on physics of Semiconducting Compounds, jaszowiec, Poland, June 7-12, 1998 — in print.Google Scholar
- 12.B. Szafran, J. Adamowski and B. Stébé: J. phys.: Condens. Matter (1998) — in printGoogle Scholar
- 13.L. Bányai and S.W. Kochj: In: Semiconductor Quantumn Dots. Singapore: World Scientific 1993Google Scholar