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Few-Electron Artificial Atoms

  • J. Adamowski
  • B. Szafran
  • S. Bednarek
  • B. Stébé
Part of the Few-Body Systems book series (FEWBODY, volume 10)

Abstract

Artificial atoms, ie., bound systems of excess electrons confined in semiconductor quantum dots, are studied by the vanaUonal and Hartree Fock methods. The confinement potential is assumed to have the form of a spherS potential well of finite depth, which provides a theoretical model for eÍctron’ states in a spherical semiconductor nanocrystal embedded in an insulating matrix. For the two- and three-electron artificial atoms, we have applied the variational method and obtained the binding of both the ground states and excited states. The Hartee-Fock method has been applied to the N-electron artificial atoms with N = 1, …, 20. It is shown that the shells of the artificial atoms are filled bt electrons in the same manner like those of the natural atoms. In particular, Hund’s rule is fulfilled. The radial probability density calculated for artificial atoms is different from that for natural atoms.

Keywords

Excess Electron Trial Wave Function Confinement Potential Linear Variational Parameter Natural Atom 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1999

Authors and Affiliations

  • J. Adamowski
    • 1
  • B. Szafran
    • 1
  • S. Bednarek
    • 1
  • B. Stébé
    • 2
  1. 1.Faculty of Physics & Nuclear TechniquesTechnical University (AGH)KrakówPoland
  2. 2.Institut de Physique et d’ElectroniqueUniversité de MetzMetzFrance

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