3D Simulation of MOS Transistors with Inversion Condition in Two Directions

Conference paper


The 3D device simulator MINIMOS has been extended for simulation of complex oxide structures, allowing inversion condition in two dimensions. The results for a test structure with a threefold bent gate oxide show enhanced channel formation in regions where the inversion condition is fulfilled in two directions.


Gate Oxide Width Direction Inversion Condition Gate Oxide Thickness Oxide Boundary 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    P. Ciampolini, A. Pierantoni, G. Baccarani: “Efficient 3–D Simulation of Complex Structures”, IEEE Trans. CAD, Vol. 10, Nr. 9, Sep. 1991, P. 1141Google Scholar
  2. [2]
    G. Heiser, C. Pomerell, J. Weis, W. Fichtner: “Three-Dimensional Numerical Semiconductor Device Simulation: Algorithms, Architectures, Results”, IEEE Trans. CAD, Vol. 10, Nr. 10, Oct. 1991, P. 1218Google Scholar
  3. [3]
    M. Thurner, P. Lindorfer, S. Selberherr: “Numerical treatment of Nonrectangular Field–Oxide for 3D MOSFET Simulation”, Proc. of SISDEP 3, 1988, p. 375Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • G. Punz
    • 1
  1. 1.PSESiemens AG ÖsterreichWienAustria

Personalised recommendations