3D Simulation of MOS Transistors with Inversion Condition in Two Directions
The 3D device simulator MINIMOS has been extended for simulation of complex oxide structures, allowing inversion condition in two dimensions. The results for a test structure with a threefold bent gate oxide show enhanced channel formation in regions where the inversion condition is fulfilled in two directions.
KeywordsGate Oxide Width Direction Inversion Condition Gate Oxide Thickness Oxide Boundary
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- P. Ciampolini, A. Pierantoni, G. Baccarani: “Efficient 3–D Simulation of Complex Structures”, IEEE Trans. CAD, Vol. 10, Nr. 9, Sep. 1991, P. 1141Google Scholar
- G. Heiser, C. Pomerell, J. Weis, W. Fichtner: “Three-Dimensional Numerical Semiconductor Device Simulation: Algorithms, Architectures, Results”, IEEE Trans. CAD, Vol. 10, Nr. 10, Oct. 1991, P. 1218Google Scholar
- M. Thurner, P. Lindorfer, S. Selberherr: “Numerical treatment of Nonrectangular Field–Oxide for 3D MOSFET Simulation”, Proc. of SISDEP 3, 1988, p. 375Google Scholar