Models for the Chemo-Physical Reactions at the Sensitive Layer of Semiconductor Gas Sensors and their Application in the Simulation of these Devices

  • Z. Gergintschew
  • D. Schipanski
Conference paper


In this paper we consider models for some adsorption effects, the resulting change of the work function at metal-oxide-semiconductor sensitive layers of gas sensors and their implementation in a two dimensional device simulator, which solves the Poisson equation. An example for the application of this simulation program is given with a Suspended Gate Field Effect Transistor.


Work Function Adsorbed Particle Adsorption Effect Sensitive Layer Work Function Change 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • Z. Gergintschew
    • 1
  • D. Schipanski
    • 1
  1. 1.Institut für FestkörperelektronikTechnische Universität IlmenauIlmenauGermany

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