Models for the Chemo-Physical Reactions at the Sensitive Layer of Semiconductor Gas Sensors and their Application in the Simulation of these Devices

  • Z. Gergintschew
  • D. Schipanski
Conference paper


In this paper we consider models for some adsorption effects, the resulting change of the work function at metal-oxide-semiconductor sensitive layers of gas sensors and their implementation in a two dimensional device simulator, which solves the Poisson equation. An example for the application of this simulation program is given with a Suspended Gate Field Effect Transistor.


Work Function Adsorbed Particle Adsorption Effect Sensitive Layer Work Function Change 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    Volkenstein, Th. : The Electron Theory of Catalysis on Semiconductors, McMillan,New York,1963.Google Scholar
  2. [2]
    Geistlinger, H. : Interface and surface statistics for a Schottky-barrier gas sensor, Sensors and Actuators B, 7(1992) Google Scholar
  3. [3]
    Lundstroem, I. : Hydrogen sensitive MOS-structures Part 1: Principles and Applications, Sensors and Actuators, 1(1981) Google Scholar
  4. [4]
    Lortenz, H. ; Peschke, M. ; Riess, II. ; Janata, J. ; Eisele, I. : New suspended gate PET technology for physical deposition of chemically sensitive layers,Sensors and Actuators, A21–A23 (1990) Google Scholar
  5. [5]
    Gajewski, B. ; Heinemann, B. : Two Dimensional Semiconductor Analysis Package, Handbuch, IA AS Berlin, (1991) Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • Z. Gergintschew
    • 1
  • D. Schipanski
    • 1
  1. 1.Institut für FestkörperelektronikTechnische Universität IlmenauIlmenauGermany

Personalised recommendations