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Electro-Elastic Simulation of Piezoresistive Pressure Sensor

  • P. Ciampolini
  • A. Rossi
  • A. Pierantoni
  • M. Rudan

Abstract

Transport properties of the silicon crystal are sensitive, to some extent, to mechanical perturbations: this allows for integrating mechanical sensors, together with the sensing circuitry, within a silicon chip by using an almost standard IC technology. In this paper, the numerical simulation of a silicon pressure sensor, based on the piezoresistive effect, is described. The simulated transducer is made of a thin silicon diaphragm, on top of which a four-resistor bridge is diffused. For a given pressure, the distribution of the stress components over the diaphragm is feeded to the program, which then computes the sensor response depending on its geometrical and physical features. To this purpose, an anisotropical, stress-dependent, mobility model has been introduced into the device simulator HFIELDS-3D.

Keywords

Stress Component Semiconductor Crystal Mobility Tensor Full Numerical Simulation Diaphragm Edge 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Y. Kanda, A Graphical Representation of the Piezoresistance Coefficients in Silicon,IEEE Trans. ED, Vol. ED-29, No. 1, Jan. 1982, p. 64.CrossRefGoogle Scholar
  2. [2]
    S. Timoshenko, S. WoinowskyKrieger, Theory of Plates and Shells, McGraw-Hill, New York, 1959.Google Scholar
  3. [3]
    K.W. Lee, K. D. Wise, SENSIM: A Simulation Program for Solid-State Pressure Sensors IEEE Trans. ED, Vol. ED-29, No. 1, Jan. 1982, p. 34.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • P. Ciampolini
    • 1
  • A. Rossi
    • 2
  • A. Pierantoni
    • 2
  • M. Rudan
    • 2
  1. 1.Istituto di ElettronicaUniversità di PerugiaPerugiaItaly
  2. 2.Dipartimento di Elettronica, Informatica e SistemisticaUniversità di BolognaBolognaItaly

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