Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors

  • W. Allegretto
  • A. Nathan
  • T. Manku
Conference paper


The output response of n-type Hall sensors are presented for various device (or current flow) orientations in the presence of both stress and magnetic field. The resulting distributions of potential and terminal characteristics are based on a numerical solution of the piezo-Hall transport equation where the conductivity and Hall coefficient are tensors.


Uniaxial Stress Hall Coefficient Hall Voltage Fourth Rank Tensor Piezoresistance Effect 


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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • W. Allegretto
    • 1
  • A. Nathan
    • 2
  • T. Manku
    • 2
  1. 1.Department of MathematicsUniversity of AlbertaEdmontonCanada
  2. 2.Electrical and Computer EngineeringUniversity of WaterlooWaterlooCanada

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