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Determination of EBIC Response by Two-Dimensional Device Simulation

  • A. Erlebach
  • R. Stephan
  • G. Dallmann
Conference paper

Abstract

The carrier generation as a result of electron beam irradiation of semiconductor devices has been incorporated into the device simulator ToSCA. The simulator extended with this new capability makes feasible the investigation of complex device structures under conditions which are equivalent to those of EBIC measurements. Simulation results are compared with experimental data

Keywords

Surface Charge Density Space Charge Region Electron Beam Irradiation Surface Recombination Velocity Electron Beam Induce Current 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    J. D. Schick: “ Electron Beam Induced Current Analysis of Integrated Circuits”, Scanning Electron Microscopy, I, p. 295–304, 1981Google Scholar
  2. [2]
    H. W. Marten and O. Hildebrand: “EBIC Profiling of Bevelled Samples: A Precise Method to Determine the Position of PN-Junctions and Doping Gradients”, ESSDERC, 1984Google Scholar
  3. [3]
    H. W. Marten and O. Hildebrand: “Computer Simulations of Electron Beam Induced Current (EBIC) Linescans across PN-Junctions”, Scanning Electron Microscopy, III, p. 1197–1209, 1983Google Scholar
  4. [4]
    S. Valkealahti, J. Schou and R. M. Nieminen: “Energy Deposition of keV Electrons in light Elements”, J. Appl. Phys. 65(6), 2258–2266, 1989CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Erlebach
    • 1
  • R. Stephan
    • 1
  • G. Dallmann
    • 2
  1. 1.Fraunhofer-Institut für Mikroelektronische Schaltungen und SystemeDresdenGermany
  2. 2.Institut FreseniusAngewandte Festkörperelektronik GmbHDresdenGermany

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