Determination of EBIC Response by Two-Dimensional Device Simulation
The carrier generation as a result of electron beam irradiation of semiconductor devices has been incorporated into the device simulator ToSCA. The simulator extended with this new capability makes feasible the investigation of complex device structures under conditions which are equivalent to those of EBIC measurements. Simulation results are compared with experimental data
KeywordsSurface Charge Density Space Charge Region Electron Beam Irradiation Surface Recombination Velocity Electron Beam Induce Current
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