Two Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation

  • A. Simionescu
  • G. Hobler
Conference paper


One-and two-dimensional concentration profiles of high-dose boron implants have been computed using our Monte Carlo simulator IMSIL. In the 1-D case they have been compared with experiments obtaining very good agreement. The lattice damage formation is taken into account according to the modified Kinchin-Pease model. A factor of 1/8 was found to properly describe the self-annealing process reducing the amount of lattice defects. In the 2-D case it is observed that the channeling in directions leading below the mask edge is not suppressed in contrast to vertical channeling.


Monte Carlo Simulator Crystalline Silicon Lattice Atom Vertical Channeling Damage Formation 
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  1. [1]
    G. Hobler, H. Pötzl, Proc. IEDM 91, pp. 693–696, Washington, 1991Google Scholar
  2. [2]
    G. Hobler et al., Proc. SISDEP 91, pp.389–398, Zürich, 1991Google Scholar
  3. [3]
    G. Hobler, H.Pötzl, Mater. Res. Soc. Symp. Proc., Vol. 279, in printGoogle Scholar
  4. [4]
    A.Dygo et al., Nucl. Instrum. Meth. B, 64, 701, 1992CrossRefGoogle Scholar
  5. [5]
    M. J. Norgett et al., Nucl. Eng. Des., Vol. 33, pp. 50–54, 1975CrossRefGoogle Scholar
  6. [6]
    G. Hobler, H. Pötzl, COMPEL, Vol. 11, No. 4,pp. 403–411, 1992CrossRefGoogle Scholar
  7. [7]
    Al F. Tasch et al., J. Electrochem. Soc., Vol 136, No. 3, pp. 810–814, 1989CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • A. Simionescu
    • 1
  • G. Hobler
    • 1
  1. 1.Institut für Allgemeine Elektrotechnik und ElektronikTU ViennaWienAustria

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