A General Simulation Method for Etching and Deposition Processes

  • E. Strasser
  • S. Selberherr


A new method for simulation of etching and deposition processes has been developed. This method is based on a cellular material representation and on morphological filter operations for surface movement. In this paper we describe theory and application of our approach. Simulation results both in two and three dimensions demonstrate the simulation capabilities of this new method.


Etch Rate General Simulation Filter Operation VLSI Technology Arbitrary Structure 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • E. Strasser
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaWienAustria

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