Modelling of IGBTs and LIGBTs for Power Circuit Simulation
A network model for the insulated gate bipolar transistor (IGBT) is presented for circuit analysis programs, such as PSPICE and SABER. The model contains a fast and rather accurate description of internal plasma dynamics, and accounts for shorted-anode lateral IGBT structures on Dielectric Isolated substrates. Good agreement has been obtained between measured data and simulation results.
KeywordsMobility Ratio Insulate Gate Bipolar Transistor Suitable Basis Function Excess Carrier Concentration Field Dependence Parameter
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