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Modelling of IGBTs and LIGBTs for Power Circuit Simulation

  • B. Fatemizadeh
  • R. Constapel
  • D. Silber

Abstract

A network model for the insulated gate bipolar transistor (IGBT) is presented for circuit analysis programs, such as PSPICE and SABER. The model contains a fast and rather accurate description of internal plasma dynamics, and accounts for shorted-anode lateral IGBT structures on Dielectric Isolated substrates. Good agreement has been obtained between measured data and simulation results.

Keywords

Mobility Ratio Insulate Gate Bipolar Transistor Suitable Basis Function Excess Carrier Concentration Field Dependence Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    B. Fatemizadeh, D. Silber, “A Versatile Electrical Model for IGBT Including Thermal Effects”, PESC’93, Seattle, June 1993Google Scholar
  2. [2]
    Y. Kim and J. G. Fossum, “Physical DMOST Modeling for High-Voltage IC CAD”, IEEE Trans. Electron Devices, vol. ED-37, pp. 797–803, March 1990CrossRefGoogle Scholar
  3. [3]
    T. Vogler and D. Schröder, “A New and Accurate Circuit-Modeling Approach for the Power-Diode”, PESC’92, Toledo, June 1992, pp. 870–876Google Scholar
  4. [4]
    B. Allard, H. Morel and J. P. Chante, “State-Variable Modeling of High-Level Injection Regions in Power Devices”,PESC’92, Toledo, June 1992, pp. 885–892Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • B. Fatemizadeh
    • 1
  • R. Constapel
    • 2
  • D. Silber
    • 1
  1. 1.Institut für Mikroelektronik und Bauelemente der ElektrotechnikUniversität BremenBremenGermany
  2. 2.Forschungsinstitut AEG, Daimler-Benz AGFrankfurtGermany

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