Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes
Charge and potential profiles are self-consistently calculated in double-barrier heterostructures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capacitance measurements carried out on high performance resonant tunnelling diodes up to 40 GHz.
KeywordsMobile Charge Resonant Tunnelling Potential Profile Resonant Tunneling Diode Tunnelling Conductance
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