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Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes

  • P. Mounaix
  • X. Wallart
  • J. M. Libberecht
  • D. Lippens
Conference paper

Abstract

Charge and potential profiles are self-consistently calculated in double-barrier heterostructures to derive the capacitance of resonant tunnelling devices. We show that the dipole charge integrated over the accumulation or the depletion side of the device is the result of a complex arrangement of the mobile charge dragged and drifted when a bias is applied. Excellent agreement is found with capacitance measurements carried out on high performance resonant tunnelling diodes up to 40 GHz.

Keywords

Mobile Charge Resonant Tunnelling Potential Profile Resonant Tunneling Diode Tunnelling Conductance 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • P. Mounaix
    • 1
  • X. Wallart
    • 1
  • J. M. Libberecht
    • 1
  • D. Lippens
    • 1
  1. 1.Institut d’Electronique et de Microélectronique du Nord, Département Hyperfréquences et Semiconducteurs, UMR-CNRS 9929Université des Sciences et Technologies de LilleVilleneuve D’Ascq CédexFrance

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