Advertisement

Computer Simulation of Inverse Problems of Crystal Growth and Photoconductivity of Graded Band Gap Semiconductors

  • S. V. Kletskii
Conference paper

Abstract

Some problems of semiconductor science and technology in conformity with graded band gap materials are studied by methods of complex computer simulation. The main goal of the study is analysis and optimization of optical characteristics of infrared photodetectors based on narrow gap semiconductors such as Cd x Mn y Hg 1 - x - y Te

Keywords

Liquid Phase Epitaxy Stefan Problem Compositional Profile Infrared Photodetector Crystal Growth Condition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Zhovnir G. I., Kletskii S. V., Sochinskii N. V., Frasunak V. M., - Phase Equilibria in Mn-Hg-Te System, Izv.AN SSSR, Neorg. mater., 1989, v.25, p.1216–1218 (in Russian).Google Scholar
  2. [2]
    Zhovnir G. I., Kletskii S. V., - Numerical Solution of Inverse Stefan Problem, Kristallografia, 1988, v.33, No. 5, p.1271–1273 (in Russian).Google Scholar
  3. [3]
    Zhovnir G. I., Kletskii S. V., Sochinskii N. V., - Computer Simulation of the Inverse Stefan Problem in Conformity with the Liquid Phase Epitaxy of Mn x Hg 1 _ x Te, Phys.stat.sol.(a), 1989, v.115, No. 1, p.K31–K34.CrossRefGoogle Scholar
  4. [4]
    Kletskii S. V., Sochinskii N. V., Zhovnir G. I., - Interdiffusion in Heterostructures Cd x Mn y Hg 1 - x - y Te /CdTe, Ukrainian Phys.J. - in press.Google Scholar
  5. [5]
    Shewmon P.G., - Diffusion in Solids, McGraw-Hill Book Company, N.-Y., 1964.Google Scholar
  6. [6]
    White A. M., - The Characteristics of Minority-carrier Exclusion in Narrow Direct Gap Semiconductors, Infrared Phys., 1985, v.25, No. 6, pp.729–741.CrossRefGoogle Scholar
  7. [7]
    Ashley T., Elliot C. T., Harker A. T., - Non-equilibrium Modes of Operation for Infrared Detectors, Infrared Phys., 1986, v.26, No.6, pp.303–315.CrossRefGoogle Scholar
  8. [8]
    Kletskii S.V., - Spectral Characteristics of Graded Band Gap Semiconductors with Nonlinear Profile of Composition, Fizika i tehnika poluprovodnikov, 1992, v.26, No. 9, p.1631–1634 (in Russian).Google Scholar
  9. [9]
    Kletskii S. V., Sizov F. F., - CdxHg1-xTe-Graded Band Gap Structures with Nonlinear Profile of Composition, Ukrainian Phys.J. - in press.Google Scholar
  10. [10]
    Selberherr S., - Analysis and Simulation of Semiconductor Devices,Springer-Verlag, Wien, 1984.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. V. Kletskii
    • 1
  1. 1.Institute for Semiconductor PhysicsAcademy of Sciences of UkraineKievUkraine

Personalised recommendations